MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HYG200P10LR1P
P-Channel 100V 80A 214W Through Hole TO-220FB-3
TO-220FB-3ROHS CompliantActive
MOSFET P-CH 100V 80A TO-220FB-3
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG200P10LR1P
- Store part #
- C2687417
- Package / case
- TO-220FB-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
166 in stock
#C2687417
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹109.20 | ₹109.20 |
| 10+ | ₹88.97 | ₹889.70 |
| 50+ | ₹68.97 | ₹3,448.50 |
| 100+ | ₹58.95 | ₹5,895.00 |
| 500+ | ₹52.87 | ₹26,435.00 |
| 1,000+ | ₹49.82 | ₹49,820.00 |
1 × ₹109.20
₹109.20
excl. GST
₹128.86 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HYG200P10LR1P
₹109.20 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 278pF
- Ciss-Input Capacitance
- 11.52nF
- Pd - Power Dissipation
- 214W
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 91pF
- RDS(on)
- 32mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 181nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.74 g
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