
IDK08G65C5
Standalone 650V 1.5V@8A 8A TO-263-2 Single Diodes RoHS
- Manufacturer
- Infineon
- Manufacturer part #
- IDK08G65C5
- Store part #
- C535892
- Package / case
- TO-263-2
- Category
- Single Diodes
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
26 in stock
#C535892
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹642.79 | ₹642.79 |
| 10+ | ₹553.15 | ₹5,531.50 |
| 30+ | ₹479.63 | ₹14,388.90 |
| 100+ | ₹425.60 | ₹42,560.00 |
| 500+ | ₹400.88 | ₹2,00,440.00 |
| 1,000+ | ₹389.57 | ₹3,89,570.00 |
1 × ₹642.79
₹642.79
excl. GST
₹758.49 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IDK08G65C5
₹642.79 for 1 + GST
Specifications
- Operating Junction Temperature Range
- -55℃~+175℃
- Diode Configuration
- Standalone
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Voltage - Forward(Vf@If)
- 1.5V@8A
- Reverse Leakage Current (Ir)
- 400nA@650V
- Non-Repetitive Peak Forward Surge Current
- 68A
- Current - Rectified
- 8A
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.6 g
Overview
ThinQ!™ Generation 5 represents leading edge technology for the SiC Schottky Barrier diodes. The proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc×Vf). The new thinQ!™ Generation 5 has been designed to complement the 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Applications
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
Key features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target applications
- Breakdown voltage tested at 18 mA2)
- Optimized for high temperature operation
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
![]() | CI08S65M3#C967709Tokmas · TO-263-2 | Tokmas | TO-263-2 | 1,327 | ₹183.10 · 1,327 in stock | View |
![]() | CI10S120M3#C967724Tokmas · TO-263 | Tokmas | TO-263 | 798 | ₹249.40 · 798 in stock | View |
![]() | IDK12G65C5#C535896Infineon · TO-263-2 | Infineon | TO-263-2 | 50 | ₹650.45 · 50 in stock | View |
| NXPSC12650B6J#C602646WeEn · TO-263 | WeEn | TO-263 | 35 | ₹1,092.23 · 35 in stock | View | |
![]() | FFSB0865A#C605077onsemi · TO-263 | onsemi | TO-263 | 16 | ₹466.30 · 16 in stock | View |
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