IDL06G65C5
SiC Diode Independent 650V 6A Surface Mount VSON-4(8x8)
DIODE SIC 650V 6A VSON-4(8x8)
- Manufacturer
- Infineon
- Manufacturer part #
- IDL06G65C5
- Store part #
- C535900
- Package / case
- VSON-4(8x8)
- Category
- Single Diodes
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
19 in stock
#C535900
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹192.27 | ₹192.27 |
| 10+ | ₹187.88 | ₹1,878.80 |
| 30+ | ₹185.15 | ₹5,554.50 |
| 100+ | ₹173.63 | ₹17,363.00 |
1 × ₹192.27
₹192.27
excl. GST
₹226.88 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
IDL06G65C5
₹192.27 for 1 + GST
Specifications
- Operating Junction Temperature Range
- -55℃~+150℃
- Diode Configuration
- Standalone
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Voltage - Forward(Vf@If)
- 1.5V@6A
- Reverse Leakage Current (Ir)
- 300nA@650V
- Non-Repetitive Peak Forward Surge Current
- 36A
- Current - Rectified
- 6A
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.2 g
Overview
ThinQ!™ Generation 5 represents leading edge technology for the SiC Schottky Barrier diodes. The proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc×Vf). The new thinQ!™ Generation 5 has been designed to complement the 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Applications
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
Key features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target applications
- Breakdown voltage tested at 14 mA
- Optimized for high temperature operation
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