MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IMBG65R163M1HXTMA1
650V 17A 85W 217mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS
TO-263-7ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMBG65R163M1HXTMA1
- Store part #
- C3283198
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
49 in stock
#C3283198
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹471.32 | ₹471.32 |
| 10+ | ₹403.53 | ₹4,035.30 |
| 30+ | ₹363.11 | ₹10,893.30 |
| 100+ | ₹322.26 | ₹32,226.00 |
| 500+ | ₹303.35 | ₹1,51,675.00 |
| 1,000+ | ₹294.88 | ₹2,94,880.00 |
1 × ₹471.32
₹471.32
excl. GST
₹556.16 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IMBG65R163M1HXTMA1
₹471.32 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 45pF
- Current - Continuous Drain(Id)
- 17A
- Ciss-Input Capacitance
- 320pF
- Pd - Power Dissipation
- 85W
- Reverse Transfer Capacitance (Crss)
- 4.8pF
- RDS(on)
- 217mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 10nC
- Gate Threshold Voltage (Vgs(th))
- 5.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.33 g
Overview
650V CoolSiC™ is built on Infineon's reliable silicon carbide technology developed over more than 20 years. Leveraging the properties of wide-bandgap SiC material, the 650V CoolSiC™ MOSFET delivers a unique combination of performance, reliability, and ease of use. It is suitable for high-temperature and harsh operating environments, enabling maximum system efficiency in a simple and cost-effective manner.
Applications
- Telecom and server switch-mode power supplies
- Uninterruptible power supplies
- Solar PV inverters
- EV charging infrastructure
- Class D amplifiers
Key features
- Optimized switching characteristics at higher currents
- Commutation-robust fast body diode with low Qfr
- Excellent gate oxide reliability
- Superior thermal performance with maximum junction temperature Tj,max = 175°C
- Low temperature dependence of RDS(on) and pulse current
- Enhanced avalanche capability
- Compatible with standard gate drivers
- Kelvin source reduces switching losses by up to 4x
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | IMBG120R060M1HXTMA1#C3279261Infineon · TO-263-7-12 | Infineon | TO-263-7-12 | 2 | ₹1,162.45 · 2 in stock | View |
 | IMBG65R050M2HXTMA1#C27031194Infineon · TO-263-7 | Infineon | TO-263-7 | 21 | ₹1,079.45 · 21 in stock | View |
 | NCES120P160D7#C54426066NCE · TO263-7L | NCE | TO263-7L | 412 | ₹110.80 · 412 in stock | View |
 | C3M0120090J-TR#C5713507Wolfspeed · TO-263-7 | Wolfspeed | TO-263-7 | 1 | ₹1,584.00 · 1 in stock | View |
| IMBG65R060M2H#C43314458Infineon · TO-263-7 | Infineon | TO-263-7 | 18 | ₹1,761.27 · 18 in stock | View | |
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