MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IMT65R039M1HXUMA1
650V 61A 263W 51mΩ 1 N-channel N-Channel HSOF-8-1 Single FETs, MOSFETs RoHS
HSOF-8-1ROHS3 CompliantActive
650 V CoolSiC M1 SiC Trench Power Device
- Manufacturer
- Infineon
- Manufacturer part #
- IMT65R039M1HXUMA1
- Store part #
- C20191541
- Package / case
- HSOF-8-1
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C20191541
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,104.24 | ₹1,104.24 |
| 10+ | ₹1,076.05 | ₹10,760.50 |
| 30+ | ₹1,057.41 | ₹31,722.30 |
| 100+ | ₹1,038.54 | ₹1,03,854.00 |
1 × ₹1,104.24
₹1,104.24
excl. GST
₹1,303.00 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IMT65R039M1HXUMA1
₹1,104.24 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 61A
- Output Capacitance(Coss)
- 208pF
- Ciss-Input Capacitance
- 1.393nF
- Pd - Power Dissipation
- 263W
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 51mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 41nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.7V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.88 g
Overview
650V CoolSiC™ is built on Infineon's reliable silicon carbide technology developed over more than 20 years. Leveraging the properties of wide-bandgap SiC material, the 650V CoolSiC™ MOSFET delivers a unique combination of performance, reliability, and ease of use. It is suited for high-temperature and harsh operating environments, enabling maximum system efficiency in a simple and cost-effective manner.
Applications
- Switching power supplies
- Uninterruptible power supplies
- Solar PV inverters
- EV charging infrastructure
- Class D amplifiers
Key features
- Optimized switching characteristics at higher currents
- Robust commutation fast body diode with low Qf
- Superior gate oxide reliability
- Maximum junction temperature Tj,max = 175°C with excellent thermal performance
- Low on-state resistance RDS(on) with minimal pulse current variation over temperature
- Enhanced avalanche capability
- Compatible with standard gate drivers (recommended drive voltage: 0V - 18V)
- Kelvin source enables up to 4x reduction in switching losses
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | IMT65R026M2HXUMA1#C42670744Infineon · HSOF-8 | Infineon | HSOF-8 | 15 | ₹1,571.47 · 15 in stock | View |
| IMT65R033M2HXUMA1#C43311734Infineon · HSOF-8 | Infineon | HSOF-8 | 20 | ₹1,658.42 · 20 in stock | View | |
 | IMT65R030M1HXUMA1#C20191540Infineon · HSOF-8-1 | Infineon | HSOF-8-1 | On request | ₹952.72 · 0 in stock | View |
| IMT65R040M2HXUMA1#C42670745Infineon · HSOF-8 | Infineon | HSOF-8 | On request | ₹1,184.68 · 0 in stock | View | |
 | IMT65R020M2HXUMA1#C43311733Infineon · HSOF-8 | Infineon | HSOF-8 | On request | ₹1,956.45 · 0 in stock | View |
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