MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
JSMSEMIDatasheet (PDF)
IPB083N10N3GATMA1-JSM
100V 85A 256W 7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS
TO-263ROHS CompliantActive
- Manufacturer
- JSMSEMI
- Manufacturer part #
- IPB083N10N3GATMA1-JSM
- Store part #
- C52948789
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
200 in stock
#C52948789
Stock & price checked 32 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹127.18 | ₹127.18 |
| 10+ | ₹103.91 | ₹1,039.10 |
| 30+ | ₹92.27 | ₹2,768.10 |
| 100+ | ₹80.62 | ₹8,062.00 |
| 500+ | ₹73.73 | ₹36,865.00 |
| 800+ | ₹70.07 | ₹56,056.00 |
1 × ₹127.18
₹127.18
excl. GST
₹150.07 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 800 per reel
IPB083N10N3GATMA1-JSM
₹127.18 for 1 + GST
Specifications
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 580pF
- Current - Continuous Drain(Id)
- 85A
- Ciss-Input Capacitance
- 4.646nF
- Pd - Power Dissipation
- 256W
- Reverse Transfer Capacitance (Crss)
- 30pF
- RDS(on)
- 7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.609 g
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