MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPB60R190C6-VB
N-Channel 650V 20A 208W Surface Mount TO-263(D2PAK)
TO-263(D2PAK)RoHSActive
MOSFET N-CH 650V 20A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPB60R190C6-VB
- Store part #
- C18795000
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
28 in stock
#C18795000
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹364.66 | ₹364.66 |
| 10+ | ₹311.09 | ₹3,110.90 |
| 50+ | ₹277.49 | ₹13,874.50 |
| 100+ | ₹243.04 | ₹24,304.00 |
| 500+ | ₹227.49 | ₹1,13,745.00 |
| 1,000+ | ₹220.77 | ₹2,20,770.00 |
1 × ₹364.66
₹364.66
excl. GST
₹430.30 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPB60R190C6-VB
₹364.66 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 105pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 2.322nF
- Pd - Power Dissipation
- 208W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 190mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 106nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.37 g
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