MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IPB80N06S407ATMA1-HXY
60V 90A 83W 5.8mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPB80N06S407ATMA1-HXY
- Store part #
- C54582762
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
12 in stock
#C54582762
Stock & price checked 20 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹195.82 | ₹195.82 |
| 10+ | ₹164.86 | ₹1,648.60 |
| 30+ | ₹147.88 | ₹4,436.40 |
| 100+ | ₹128.54 | ₹12,854.00 |
| 500+ | ₹107.04 | ₹53,520.00 |
| 800+ | ₹103.18 | ₹82,544.00 |
1 × ₹195.82
₹195.82
excl. GST
₹231.07 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 800 per reel
IPB80N06S407ATMA1-HXY
₹195.82 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Output Capacitance(Coss)
- 242pF
- Current - Continuous Drain(Id)
- 90A
- Ciss-Input Capacitance
- 4.008nF
- Pd - Power Dissipation
- 83W
- Reverse Transfer Capacitance (Crss)
- 200pF
- RDS(on)
- 5.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 75nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.76 g
Same category
