MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IPD052N10NF2SATMA1
150W 100V 118A 5.2mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS
TO-252-3ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IPD052N10NF2SATMA1
- Store part #
- C20191575
- Package / case
- TO-252-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C20191575
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹254.78 | ₹254.78 |
| 10+ | ₹215.54 | ₹2,155.40 |
| 30+ | ₹191.04 | ₹5,731.20 |
| 100+ | ₹165.89 | ₹16,589.00 |
| 500+ | ₹154.61 | ₹77,305.00 |
| 1,000+ | ₹149.62 | ₹1,49,620.00 |
1 × ₹254.78
₹254.78
excl. GST
₹300.64 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per tube
IPD052N10NF2SATMA1
₹254.78 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 570pF
- Ciss-Input Capacitance
- 3.6nF
- Pd - Power Dissipation
- 150W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 118A
- Reverse Transfer Capacitance (Crss)
- 25pF
- RDS(on)
- 5.2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 76nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 2,000 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.627 g
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