MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IPD053N06N3GBTMA1-HXY
125W 60V 120A 4.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPD053N06N3GBTMA1-HXY
- Store part #
- C54582761
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C54582761
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹90.86 | ₹90.86 |
| 10+ | ₹73.72 | ₹737.20 |
| 30+ | ₹65.14 | ₹1,954.20 |
| 100+ | ₹56.58 | ₹5,658.00 |
| 500+ | ₹51.65 | ₹25,825.00 |
| 1,000+ | ₹48.86 | ₹48,860.00 |
1 × ₹90.86
₹90.86
excl. GST
₹107.21 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD053N06N3GBTMA1-HXY
₹90.86 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 472pF
- Ciss-Input Capacitance
- 5.066nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 283pF
- RDS(on)
- 4.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 98nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.406 g
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