MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IPP086N10N3 G
N-Channel 100V 80A 125W Through Hole TO-220-3
TO-220-3ROHS3 CompliantActive
MOSFET N-CH 100V 80A TO-220-3
- Manufacturer
- Infineon
- Manufacturer part #
- IPP086N10N3 G
- Store part #
- C537148
- Package / case
- TO-220-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
114 in stock
#C537148
Stock & price checked 22 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹159.94 | ₹159.94 |
| 10+ | ₹132.13 | ₹1,321.30 |
| 50+ | ₹112.14 | ₹5,607.00 |
| 100+ | ₹98.44 | ₹9,844.00 |
| 500+ | ₹90.19 | ₹45,095.00 |
| 1,000+ | ₹85.84 | ₹85,840.00 |
1 × ₹159.94
₹159.94
excl. GST
₹188.73 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP086N10N3 G
₹159.94 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 523pF
- Ciss-Input Capacitance
- 3.98nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 21pF
- RDS(on)
- 8.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 55nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.8 g
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