MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
JSMSEMIDatasheet (PDF)
IPP086N10N3GXKSA1-JSM
100V 80A 256W 9mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
TO-220-3ROHS CompliantActive
- Manufacturer
- JSMSEMI
- Manufacturer part #
- IPP086N10N3GXKSA1-JSM
- Store part #
- C55112126
- Package / case
- TO-220-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
200 in stock
#C55112126
Stock & price checked 43 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹86.44 | ₹86.44 |
| 10+ | ₹70.71 | ₹707.10 |
| 50+ | ₹62.74 | ₹3,137.00 |
| 100+ | ₹54.97 | ₹5,497.00 |
| 500+ | ₹50.23 | ₹25,115.00 |
| 1,000+ | ₹47.64 | ₹47,640.00 |
1 × ₹86.44
₹86.44
excl. GST
₹102.00 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP086N10N3GXKSA1-JSM
₹86.44 for 1 + GST
Specifications
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 80A
- Output Capacitance(Coss)
- 580pF
- Ciss-Input Capacitance
- 4.646nF
- Pd - Power Dissipation
- 256W
- Reverse Transfer Capacitance (Crss)
- 30pF
- RDS(on)
- 9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.74 g
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