MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IPP111N15N3GXKSA1
214W 150V 83A 11.1mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
TO-220ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IPP111N15N3GXKSA1
- Store part #
- C513207
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
30 in stock
#C513207
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹572.95 | ₹572.95 |
| 10+ | ₹494.15 | ₹4,941.50 |
| 30+ | ₹447.35 | ₹13,420.50 |
| 100+ | ₹400.11 | ₹40,011.00 |
| 500+ | ₹378.13 | ₹1,89,065.00 |
| 1,000+ | ₹368.34 | ₹3,68,340.00 |
1 × ₹572.95
₹572.95
excl. GST
₹676.08 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 500 per tube
IPP111N15N3GXKSA1
₹572.95 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 378pF
- Ciss-Input Capacitance
- 3.23nF
- Pd - Power Dissipation
- 214W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 83A
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 11.1mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 41nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 500 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.75 g
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