MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPP180N10N3G-VB
N-Channel 100V 70A 3.35W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 70A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPP180N10N3G-VB
- Store part #
- C29779672
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C29779672
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹123.52 | ₹123.52 |
| 10+ | ₹99.36 | ₹993.60 |
| 50+ | ₹87.38 | ₹4,369.00 |
| 100+ | ₹75.41 | ₹7,541.00 |
| 500+ | ₹68.28 | ₹34,140.00 |
| 1,000+ | ₹64.71 | ₹64,710.00 |
1 × ₹123.52
₹123.52
excl. GST
₹145.75 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP180N10N3G-VB
₹123.52 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 210pF
- Current - Continuous Drain(Id)
- 70A
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 3.35W
- Reverse Transfer Capacitance (Crss)
- 110pF
- RDS(on)
- 17mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.45 g
Overview
Applications
- Isolated DC/DC Converters
- N-Channel MOSFET
Key features
- TrenchFET Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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