VISHAY

IRFBE30SPBF

N-Channel 800V 4.1A 125W Surface Mount D2PAK(TO-263)

D2PAK(TO-263)ROHS3 CompliantActive

MOSFET N-CH 800V 4.1A D2PAK(TO-263)

Manufacturer: VISHAY
Manufacturer part #: IRFBE30SPBF
Store part #: C506483
Package / case: D2PAK(TO-263)
Category: Single FETs, MOSFETs
Packaging: Tube-packed

Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C506483

Stock & price checked 6 days ago

Quantity	Unit price	Pack price
1+	₹556.40	₹556.40
10+	₹480.08	₹4,800.80
50+	₹434.41	₹21,720.50
100+	₹388.53	₹38,853.00
500+	₹367.25	₹1,83,625.00
1,000+	₹357.66	₹3,57,660.00

Quantity (min 1)

1 × ₹556.40

₹556.40

excl. GST

₹656.55 incl. 18% GST

Need volume or a scheduled delivery? Request a quote

Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 50 per tube

IRFBE30SPBF

₹556.40 for 1 + GST

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Specifications

Output Capacitance(Coss): 310pF
Ciss-Input Capacitance: 1.3nF
Pd - Power Dissipation: 125W
Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 800V
Current - Continuous Drain(Id): 4.1A
Reverse Transfer Capacitance (Crss): 190pF
RDS(on): 3Ω@10V
Number: 1 N-channel
Gate Charge(Qg): 78nC@10V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 2V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tube-packed
Standard pack: 50 / Tube
Sold per: Piece
Minimum order: 1
Unit weight: 2.24 g

Overview

Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key features

RoHS* COMPLIANT HALOGEN FREE Available
Halogen-free According to IEC 61249-2-2 Definition
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

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