MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
TokmasDatasheet (PDF)
IXTH1N200P3(TOKMAS)
2.2kV 8.7A 94W Through Hole TO-247-3
TO-247-3ROHS CompliantActive
2200V N-Channel Silicon Carbide Power MOSFET
- Manufacturer
- Tokmas
- Manufacturer part #
- IXTH1N200P3(TOKMAS)
- Store part #
- C48586471
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
187 in stock
#C48586471
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹475.94 | ₹475.94 |
| 10+ | ₹406.06 | ₹4,060.60 |
| 30+ | ₹369.82 | ₹11,094.60 |
| 90+ | ₹327.93 | ₹29,513.70 |
| 510+ | ₹308.40 | ₹1,57,284.00 |
| 1,020+ | ₹299.71 | ₹3,05,704.20 |
1 × ₹475.94
₹475.94
excl. GST
₹561.61 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
IXTH1N200P3(TOKMAS)
₹475.94 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 2.2kV
- Current - Continuous Drain(Id)
- 8.7A
- Output Capacitance(Coss)
- 13pF
- Ciss-Input Capacitance
- 168pF
- Pd - Power Dissipation
- 94W
- Reverse Transfer Capacitance (Crss)
- 2.7pF
- RDS(on)
- 1.4Ω
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 2.8V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.038 g
Same category
