MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
LGEDatasheet (PDF)
LGE3M650170B
1.7kV 7A 62W 850mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs
TO-247-3RoHSActive
LGE3M650170B Silicon Carbide Power MOSFET
- Manufacturer
- LGE
- Manufacturer part #
- LGE3M650170B
- Store part #
- C42372481
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
30 in stock
#C42372481
Stock & price checked 26 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹685.13 | ₹685.13 |
| 10+ | ₹585.60 | ₹5,856.00 |
| 30+ | ₹526.67 | ₹15,800.10 |
| 90+ | ₹466.91 | ₹42,021.90 |
| 510+ | ₹439.30 | ₹2,24,043.00 |
| 990+ | ₹426.95 | ₹4,22,680.50 |
1 × ₹685.13
₹685.13
excl. GST
₹808.45 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
LGE3M650170B
₹685.13 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 1.7kV
- Output Capacitance(Coss)
- 13pF
- Current - Continuous Drain(Id)
- 7A
- Ciss-Input Capacitance
- 194pF
- Pd - Power Dissipation
- 62W
- Reverse Transfer Capacitance (Crss)
- 1.8pF
- RDS(on)
- 850mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 23nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 352.2 g
Same category
