
ST
M24C04-RDW6TP
4Kbit 400kHz I2C TSSOP-8 Memory
TSSOP-8RoHSActive
4-Kbit serial I²C bus EEPROM
Datasheet (PDF)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3,935 in stock
#C2061100
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹36.73 | ₹183.65 |
| 50+ | ₹29.33 | ₹1,466.50 |
| 150+ | ₹26.17 | ₹3,925.50 |
| 500+ | ₹21.34 | ₹10,670.00 |
| 2,500+ | ₹19.58 | ₹48,950.00 |
| 4,000+ | ₹18.52 | ₹74,080.00 |
5 × ₹36.73
₹183.65
excl. GST
₹216.71 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
M24C04-RDW6TP
₹183.65 for 5 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Hardware write protection function;Built-in power-on reset (POR)
- Memory Size
- 4Kbit
- Voltage - Supply
- 1.8V~5.5V;0.8mA
- Clock Frequency
- 400kHz
- Access Time
- 900ns
- Data Retention - TDR (Year)
- 200 Years
- Write Cycle Time(tWC)
- 5ms
- Standby Supply Current
- 1uA
- Write Cycle Endurance
- 4,000,000 Cycles
- Interface
- I2C
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.1 g
Overview
The M24C04 is a 4-Kbit |²C -compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 512 x 8 bits. The M24C04-W can be accessed with a supply voltage from ₂.5 V to 5.5 V, the M24C04-R can be accessed with a supply voltage from 1.8 V to 5.5 V, and the M24C04-F can be accessed with a supply voltage from 1.6 V to 5.5 V.
Key features
- Compatible with |²C bus modes: – 400 kHz – 100 kHz
- Memory array: – 4 Kbit (512 bytes) of EEPROM – Page size: 16 byte
- Single supply voltage: – M24C04-W: 2.5 V to 5.5 V M24C04-R: 1.8 V to 5.5 V M24C04-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range)
- Write: Byte Write within 5 ms – Page Write within 5 ms
- Operating temperature range: – from -40 ℃ up to +85 ℃
- Random and sequential Read modes
- Write protect of the whole memory array
- Enhanced ESD/Latch-Up protection
- More than 4 million Write cycles
- More than 200-years data retention
Alternatives
Similar parts — check the datasheet before substituting.
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