ST
M24C04-RMN6TP
4Kbit 400kHz I2C SOIC-8 Memory RoHS
SOIC-8ROHS3 CompliantActive
4-Kbit serial I²C bus EEPROM
Datasheet (PDF)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
24,480 in stock
#C81147
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹23.96 | ₹119.80 |
| 50+ | ₹19.19 | ₹959.50 |
| 150+ | ₹17.15 | ₹2,572.50 |
| 500+ | ₹14.60 | ₹7,300.00 |
| 2,500+ | ₹13.46 | ₹33,650.00 |
| 5,000+ | ₹12.78 | ₹63,900.00 |
5 × ₹23.96
₹119.80
excl. GST
₹141.36 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
M24C04-RMN6TP
₹119.80 for 5 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Hardware write protection function;Built-in power-on reset (POR)
- Memory Size
- 4Kbit
- Voltage - Supply
- 1.8V~5.5V;0.8mA
- Clock Frequency
- 400kHz
- Access Time
- 900ns
- Data Retention - TDR (Year)
- 200 Years
- Write Cycle Time(tWC)
- 5ms
- Standby Supply Current
- 1uA
- Write Cycle Endurance
- 4,000,000 Cycles
- Interface
- I2C
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.194 g
Overview
The M24C04 is a 4-Kbit |²C -compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 512 x 8 bits. The M24C04-W can be accessed with a supply voltage from ₂.5 V to 5.5 V, the M24C04-R can be accessed with a supply voltage from 1.8 V to 5.5 V, and the M24C04-F can be accessed with a supply voltage from 1.6 V to 5.5 V.
Key features
- Compatible with |²C bus modes: – 400 kHz – 100 kHz
- Memory array: – 4 Kbit (512 bytes) of EEPROM – Page size: 16 byte
- Single supply voltage: – M24C04-W: 2.5 V to 5.5 V M24C04-R: 1.8 V to 5.5 V M24C04-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range)
- Write: Byte Write within 5 ms – Page Write within 5 ms
- Operating temperature range: – from -40 ℃ up to +85 ℃
- Random and sequential Read modes
- Write protect of the whole memory array
- Enhanced ESD/Latch-Up protection
- More than 4 million Write cycles
- More than 200-years data retention
Alternatives
Similar parts — check the datasheet before substituting.
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