ST
M24C64-FMH6TG
64Kbit 1.7V~5.5V 1MHz I2C UFDFPN-5(1.4x1.7) Memory RoHS
UFDFPN-5(1.4x1.7)ROHS3 CompliantActive
64-Kbit serial I2C bus EEPROM
Datasheet (PDF)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,220 in stock
#C222104
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹74.97 | ₹74.97 |
| 10+ | ₹60.16 | ₹601.60 |
| 30+ | ₹52.57 | ₹1,577.10 |
| 100+ | ₹45.17 | ₹4,517.00 |
| 500+ | ₹40.83 | ₹20,415.00 |
| 1,000+ | ₹38.48 | ₹38,480.00 |
1 × ₹74.97
₹74.97
excl. GST
₹88.46 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
M24C64-FMH6TG
₹74.97 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Hardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function
- Memory Size
- 64Kbit
- Voltage - Supply
- 1.7V~5.5V
- Clock Frequency
- 1MHz
- Data Retention - TDR (Year)
- 200 Years
- Write Cycle Time(tWC)
- 5ms
- Write Cycle Endurance
- 4,000,000 Cycles
- Interface
- I2C
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.06 g
Overview
This is an EEPROM storage device compatible with all I²C bus modes, featuring 64 Kbit (8 Kbyte) storage capacity and supporting multiple package options, including PDIP8 (BN), TSSOP8 (DW, 169 mil width), SO8 (MN, 150 mil width), UFDFPN8 (MC, DFN8 - 2×3 mm), UFDFPN5 (MH, DFN5 - 1.7×1.4 mm), WLCSP (CS), Thin WLCSP (CT), WLCSP (CU), and uncut wafer (each die individually tested).
Key features
- PDIP8 (BN)
- Compatible with all I²C bus modes: 1 MHz, 400 kHz, 100 kHz
- Memory array: 64 Kbit (8 Kbyte) of EEPROM
- Page size: 32 byte
- Additional Write lockable page (M24C64 - D order codes)
- Single supply voltage: 1.7 V to 5.5 V over -40°C / +85°C, 1.6 V to 5.5 V over 0°C / +85°C
- Write: Byte Write within 5 ms, Page Write within 5 ms
- Random and sequential Read modes
- Write protect of the whole memory array
- Enhanced ESD/Latch - Up protection
- More than 4 million Write cycles
- More than 200 - years data retention
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