Varnitronics
M93C46-WDW6TP ST
ST

M93C46-WDW6TP

1Kbit 2MHz TSSOP-8 Memory

TSSOP-8RoHSActive

MICROWIRE serial access EEPROM

Manufacturer
ST
Manufacturer part #
M93C46-WDW6TP
Store part #
C2061219
Package / case
TSSOP-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,129 in stock

#C2061219

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹43.54₹43.54
10+₹38.54₹385.40
30+₹36.36₹1,090.80
100+₹33.75₹3,375.00
500+₹32.66₹16,330.00
1,000+₹31.79₹31,790.00

1 × ₹43.54

₹43.54

excl. GST

₹51.38 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

M93C46-WDW6TP

₹43.54 for 1 + GST

Specifications

Operating Temperature
-40℃~+85℃
Features
Built-in power-on reset (POR);Noise suppression function
Memory Size
1Kbit
Voltage - Supply
2.5V~5.5V;2mA
Clock Frequency
2MHz
Data Retention - TDR (Year)
200 Years
Write Cycle Time(tWC)
5ms
Standby Supply Current
3uA
Write Cycle Endurance
4,000,000 Cycles

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.23 g

Overview

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ℃ / +85 ℃.

Key features

  • Industry standard MICROWIRE™ bus
  • Single supply voltage: 2.5 V to 5.5 V for M93Cx6-W, 1.8 V to 5.5 V for M93Cx6-R
  • Dual organization: by word (x16) or byte (x8)
  • Programming instructions that work on: byte, word or entire memory
  • Self-timed programming cycle with auto-erase: 5 ms
  • READY/BUSY signal during programming
  • 2 MHz clock rate
  • Sequential read operation
  • Enhanced ESD/latch-up behavior
  • More than 4 million write cycles
  • More than 200-year data retention

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