M93C66-RMN3TP/K

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are Electrically Erasable PROgrammable Memory (EEPROM) devices accessed through the MICROWIRE TM bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-A125 devices operate within a voltage supply range from 1.8 V to 5.5 V. The M93Cx6-A125 devices are guaranteed over the -40 ℃/+125 ℃ temperature range and are compliant with the Automotive standard AEC-Q100 Grade 1. A Read Data from Memory (READ) instruction loads the address of the first byte or word to be read in an internal address register. The data at this address is then clocked out serially. The address register is automatically incremented after the data is output and, if Chip Select Input (S) is held High, the M93Cx6-A125 can output a sequential stream of data bytes or words. In this way, the memory can be read as a data stream from eight to 16384 bits long (in the case of the M93C86), or continuously (the address counter automatically rolls over to 00h when the highest address is reached). Programming is internally self-timed (the external clock signal on Serial Clock (C) may be stopped or left running after the start of a Write cycle) and does not require an Erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at a time into one of the byte or word locations of the M93Cx6-A125. After the start of the programming cycle, a Busy/Ready signal is available on Serial Data Output (Q) when Chip Select Input (S) is driven High. An internal Power-on Data Protection mechanism in the M93Cx6-A125 inhibits the device when the supply is too low.

Applications

• Automotive electronic systems
• Automotive-grade electronics requiring high-reliability storage
• Automotive electronics with wide temperature and wide voltage range requirements
• Automotive electronic systems requiring long data retention and high write endurance
• Automotive electronics compliant with AEC-Q100 Grade 1
• Automotive electronic storage applications requiring ESD protection
• Automotive electronics communicating via MICROWIRE bus protocol
• Automotive electronic storage applications requiring sequential read and self-timed programming
• Automotive electronic storage applications requiring byte or word organization
• Automotive electronics meeting RoHS compliance and halogen-free requirements
• Automotive electronic storage devices requiring internal power-on protection
• Automotive electronic storage applications requiring continuous data stream output
• Automotive electronics with 1Kbit to 16Kbit storage capacity requirements
• Automotive electronic storage applications with 1.8V to 5.5V supply voltage
• Automotive electronics operating over -40℃ to 125℃ temperature range
• Automotive electronic programming applications requiring READY/BUSY signal
• Automotive electronic storage applications with 2MHz clock rate
• Automotive electronic write operations requiring no pre-erase
• Automotive electronic sequential read applications with auto-incremented addressing
• High-reliability storage devices compliant with automotive standards
• Automotive electronic systems requiring long-life data retention
• Automotive electronic storage devices requiring high write endurance
• Automotive electronic storage applications requiring ESD protection
• Automotive electronic storage devices with wide voltage range
• Automotive electronic storage applications with wide temperature range
• Automotive electronics meeting RoHS and halogen-free requirements
• Automotive electronic storage devices communicating via MICROWIRE bus
• Automotive electronic storage applications requiring dual organization
• Automotive electronic storage devices requiring self-timed programming
• Automotive electronic storage applications requiring internal power-on protection
• Automotive electronic storage applications requiring continuous data stream output
• Automotive electronics with 1Kbit to 16Kbit storage capacity

Key features

• Industry standard MICROWIRETM bus
• Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb
• Dual organization: by word (x16) or byte (x8)
• Write - Byte within 4 ms; Word within 4 ms
• READY/BUSY signal during programming
• 2 MHz clock rate
• Sequential read operation
• Single supply voltage: 1.8 V to 5.5 V
• Operating temperature range: -40 ℃ up to 125 ℃
• Enhanced ESD protection
• Write cycle endurance:
• 4 million Write cycles at 25 ℃
• 1.2 million Write cycles at 85 ℃
• 600 k Write cycles at 125 ℃
• Data retention:
• 50 years at 125 ℃
• more than 100 years at 25 ℃
• Packages RoHS-compliant and Halogen-free (ECOPACK2)