M95040-DRMN3TP/K

The M95040-A125 and M95040-A145 are 4-Kbit serial EEPROM Automotive grade devices operating up to 145℃. They are compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running up to 20 MHz. The memory array is based on advanced true EEPROM technology (Electrically Erasable PROgrammable Memory).

Applications

• Automotive
• Serial memory applications requiring high reliability and wide temperature range
• Data storage in embedded systems
• Non-volatile data storage in automotive electronic devices
• SPI bus device integration in industrial control or automotive-grade environments
• Storage applications requiring data integrity and write endurance
• Memory solutions with low power consumption and high-speed interface
• Automotive-grade applications compliant with AEC-Q100 Grade 0
• Memory device applications requiring noise filtering and ESD protection
• Storage applications supporting block write protection and identification page locking
• Long data retention memory applications
• Multiple package options for diverse PCB design requirements
• Memory device operation across wide voltage range (1.7V to 5.5V)
• SPI interface memory devices at high clock frequency (up to 20 MHz)
• Flexible storage operations in byte or page write mode
• Memory applications with embedded ECC for enhanced data integrity
• RoHS-compliant and halogen-free memory device applications
• Automotive-grade high-reliability memory solutions
• Memory devices for harsh environments including automotive electronics and industrial control
• Serial EEPROM applications supporting SPI bus protocol
• Memory device applications requiring high write cycle endurance
• Stable operation across wide temperature range (up to 145℃)
• Memory devices supporting write protection and lock functions
• Multiple package sizes for space-constrained PCB designs
• EEPROM technology-based memory device applications
• Byte-alterable non-volatile memory device applications
• Memory devices supporting identification page read/write and lock functions
• High-reliability memory applications compliant with AEC-Q100 Grade 0
• Data storage in automotive electronic systems
• Memory device applications requiring high-speed interface and low power consumption
• Noise-resistant memory devices with Schmitt trigger inputs
• High-efficiency memory devices with short write cycle time
• Non-volatile memory devices with long data retention
• Memory devices supporting multiple write protection modes
• High-reliability memory solutions for automotive-grade environments
• Environmentally compliant memory device applications
• Serial memory device applications supporting SPI bus protocol
• Memory device applications requiring high write cycle endurance
• Wide voltage and temperature range memory device applications
• Memory applications with embedded ECC for enhanced data integrity
• Memory devices in multiple package options
• Automotive-grade high-reliability memory device applications

Key features

• Compatible with the Serial Peripheral Interface (SPI) bus
• Memory array - 4 Kbit (512 byte) of EEPROM
• Page size: 16 byte
• Write protection by block: 1/4, 1/2 or whole memory
• Additional Write lockable Page (Identification page)
• Extended temperature and voltage ranges - Up to 125℃, VCC from 1.7 V to 5.5 V; Up to 145℃, VCC from 2.5 V to 5.5 V
• High speed clock frequency - 20 MHz for VCC ≥ 4.5 V; 10 MHz for VCC ≥ 2.5 V; 5 MHz for VCC ≥ 1.7 V
• Schmitt trigger inputs for noise filtering
• Short Write cycle time - Byte Write within 4 ms; Page Write within 4 ms
• Write cycle endurance - 4 million Write cycles at 25℃; 1.2 million Write cycles at 85℃; 600 k Write cycles at 125℃; 400 k Write cycles at 145℃
• Data retention - 50 years at 125℃; 100 years at 25℃
• ESD Protection (Human Body Model) - 4000V
• Packages - RoHS-compliant and halogen-free (ECOPACK2)