MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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MagnaChip SemiconDatasheet (PDF)
MDE10N026RH
416W 100V 120A 2.3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
- Manufacturer
- MagnaChip Semicon
- Manufacturer part #
- MDE10N026RH
- Store part #
- C40262882
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
146 in stock
#C40262882
Stock & price checked 26 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹134.43 | ₹134.43 |
| 10+ | ₹110.80 | ₹1,108.00 |
| 30+ | ₹97.80 | ₹2,934.00 |
| 100+ | ₹83.04 | ₹8,304.00 |
| 500+ | ₹76.54 | ₹38,270.00 |
| 800+ | ₹73.72 | ₹58,976.00 |
1 × ₹134.43
₹134.43
excl. GST
₹158.63 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 800 per reel
MDE10N026RH
₹134.43 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.05nF
- Ciss-Input Capacitance
- 10.42nF
- Pd - Power Dissipation
- 416W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 36pF
- RDS(on)
- 2.3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 147nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.285 g
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