MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
MSKSEMIDatasheet (PDF)
MSISH101DN-T1-GE3
31.2W 30V 70A 6.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- MSKSEMI
- Manufacturer part #
- MSISH101DN-T1-GE3
- Store part #
- C51908760
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
670 in stock
#C51908760
Stock & price checked 45 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹35.68 | ₹178.40 |
| 50+ | ₹28.09 | ₹1,404.50 |
| 150+ | ₹24.83 | ₹3,724.50 |
| 500+ | ₹20.76 | ₹10,380.00 |
| 2,500+ | ₹18.96 | ₹47,400.00 |
| 5,000+ | ₹17.87 | ₹89,350.00 |
5 × ₹35.68
₹178.40
excl. GST
₹210.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
MSISH101DN-T1-GE3
₹178.40 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 529pF
- Ciss-Input Capacitance
- 4.32nF
- Pd - Power Dissipation
- 31.2W
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 70A
- Reverse Transfer Capacitance (Crss)
- 487pF
- RDS(on)
- 6.5mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 45nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.108 g
Same category
