Varnitronics
PUYA

P25Q32SL-SSH-IR

32Mbit 1.65V~2V 85MHz SPI SOP-8-105mil Memory

SOP-8-105milRoHSActive
Manufacturer
PUYA
Manufacturer part #
P25Q32SL-SSH-IR
Store part #
C43479090
Package / case
SOP-8-105mil
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

3,910 in stock

#C43479090

Stock & price checked 6 days ago

QuantityUnit pricePack price
5+₹52.15₹260.75
50+₹41.07₹2,053.50
150+₹36.50₹5,475.00
500+₹30.64₹15,320.00
2,500+₹28.03₹70,075.00
4,000+₹26.51₹1,06,040.00

5 × ₹52.15

₹260.75

excl. GST

₹307.69 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

P25Q32SL-SSH-IR

₹260.75 for 5 + GST

Specifications

Operating Temperature
-40℃~+85℃
Features
Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size
32Mbit
Voltage - Supply
1.65V~2V
Program / Erase Cycles
100,000 cycles
Clock Frequency
85MHz
Data Retention - TDR (Year)
20 Years
Block Erase Time(tBE)
16ms
Write Cycle Time(tWC)
12ms
Page Programming Time (Tpp)
1.6ms
Standby Supply Current
9uA
Interface
SPI

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
1 g

Overview

The P25Q32SL is a serial interface flash memory device designed for the large volume of consumer applications that require code to be loaded from flash memory into embedded or external RAM for execution. The device's flexible erase architecture and page erase granularity also make it an ideal solution for data storage, eliminating the need for additional data storage devices. Its erase block sizes are optimized to meet today's code and data storage application requirements. By optimizing erase block sizes, storage space can be utilized more efficiently. Since certain code modules and data storage segments must reside independently within their own erase regions, wasted and unused storage space can be significantly reduced compared to flash memory devices that employ large sector and block erase operations. This improved storage space efficiency allows additional code routines and data storage segments to be added while maintaining the same overall device density. The device also incorporates an additional 3×1024-byte security register with OTP (One-Time Programmable) lock, which can be used for purposes such as device serialization, system-level electronic serial number storage, and lock key storage. The device is designed for use across many different systems, supporting read, program, and erase operations over a wide supply voltage range of 1.65V to 2.0V. No separate voltage is required for programming and erasing.

Alternatives

Similar parts — check the datasheet before substituting.

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