Varnitronics
P25Q40SH-TSH-IR PUYA
PUYA

P25Q40SH-TSH-IR

4Mbit 2.3V~3.6V 104MHz SPI TSSOP-8 Memory

TSSOP-8RoHSActive
Manufacturer
PUYA
Manufacturer part #
P25Q40SH-TSH-IR
Store part #
C5263831
Package / case
TSSOP-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

3,055 in stock

#C5263831

Stock & price checked 6 days ago

QuantityUnit pricePack price
5+₹27.88₹139.40
50+₹22.35₹1,117.50
150+₹19.98₹2,997.00
500+₹17.03₹8,515.00
2,500+₹15.06₹37,650.00
4,000+₹14.26₹57,040.00

5 × ₹27.88

₹139.40

excl. GST

₹164.49 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

P25Q40SH-TSH-IR

₹139.40 for 5 + GST

Specifications

Operating Temperature
-40℃~+85℃
Features
Write enable latch;Power-on reset;Hardware write protection;Software write protection
Memory Size
4Mbit
Voltage - Supply
2.3V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
104MHz
Data Retention - TDR (Year)
20 Years
Write Cycle Time(tWC)
12ms
Page Programming Time (Tpp)
3ms
Interface
SPI

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.088 g

Overview

The P25Q40SH is a serial interface flash memory device designed for high-volume consumer applications that require loading program code from flash memory into embedded or external RAM for execution. The device's flexible erase architecture and page erase granularity also make it an ideal choice for data storage, eliminating the need for additional data storage devices. The erase block sizes are optimized to meet the demands of today's code and data storage applications. By optimizing erase block sizes, storage space can be utilized more efficiently. Since certain code modules and data storage segments must reside independently in their own erase regions, the wasted and unused storage space associated with large-sector and large-block erase flash devices can be significantly reduced. This improved storage space efficiency allows additional code routines and data storage segments to be added while maintaining the same overall device density. The device also includes an additional 3×512-byte security register with one-time programmable locks, which can be used for purposes such as device serialization, system-level electronic serial number storage, and lock key storage. Designed for a variety of system configurations, the device supports read, program, and erase operations over a wide supply voltage range of 2.3V to 3.6V, with no separate programming or erase voltages required.

Key features

  • Single supply voltage 2.3V to 3.6V
  • Industrial temperature range -40℃ to 85℃
  • Compatible SPI: Mode 0 and Mode 3
  • Supports single-, dual-, quad-SPI and QPI
  • Flexible code and data storage architecture
  • Uniform 256-byte page program
  • Uniform 256-byte page erase
  • Uniform 4K-byte sector erase
  • Uniform 32K/64K-byte block erase
  • Full chip erase support
  • Sector lock protection via write protect pin hardware control
  • One-time programmable security register
  • 128-bit unique identifier per device
  • Fast program and erase speed
  • 2ms single/dual/quad page program time
  • 16ms page erase time
  • 16ms 4K-byte sector erase time
  • 16ms 32K/64K-byte block erase time
  • JEDEC standard manufacturer and device ID read
  • Ultra-low power consumption
  • 0.2µA deep power-down current
  • 10.0µA standby current
  • 2.0mA active read current at 33MHz
  • 2.5mA active program or erase current
  • High reliability
  • 100,000 program/erase cycles
  • 20-year data retention
  • Industry-standard green package options

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