MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
PSMN4R6-60BS,118-VB
220W 60V 150A 4mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- PSMN4R6-60BS,118-VB
- Store part #
- C52191012
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C52191012
Stock & price checked 18 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹154.14 | ₹154.14 |
| 10+ | ₹126.81 | ₹1,268.10 |
| 30+ | ₹113.24 | ₹3,397.20 |
| 100+ | ₹99.67 | ₹9,967.00 |
| 500+ | ₹91.50 | ₹45,750.00 |
| 800+ | ₹87.41 | ₹69,928.00 |
1 × ₹154.14
₹154.14
excl. GST
₹181.89 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 800 per reel
PSMN4R6-60BS,118-VB
₹154.14 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 715pF
- Ciss-Input Capacitance
- 7nF
- Pd - Power Dissipation
- 220W
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+175℃
- Current - Continuous Drain(Id)
- 150A
- Reverse Transfer Capacitance (Crss)
- 360pF
- RDS(on)
- 4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 96nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.686 g
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