Varnitronics
PY25Q128HA-SUH-IR PUYA
PUYA

PY25Q128HA-SUH-IR

128Mbit 2.7V~3.6V 133MHz SPI SOP-8-208mil Memory

SOP-8-208milRoHSActive

Ultra-Low Power, 128M-bit Serial Multi I/O Flash Memory

Manufacturer
PUYA
Manufacturer part #
PY25Q128HA-SUH-IR
Store part #
C5354566
Package / case
SOP-8-208mil
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

8,747 in stock

#C5354566

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹167.60₹167.60
10+₹147.79₹1,477.90
30+₹129.07₹3,872.10
100+₹115.14₹11,514.00
500+₹109.49₹54,745.00
1,000+₹106.66₹1,06,660.00

1 × ₹167.60

₹167.60

excl. GST

₹197.77 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 2,000 per reel

PY25Q128HA-SUH-IR

₹167.60 for 1 + GST

Specifications

Features
Write enable latch;Power-on reset;Hardware write protection;Software write protection
Memory Size
128Mbit
Voltage - Supply
2.7V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
133MHz
Data Retention - TDR (Year)
20 Years
Write Cycle Time(tWC)
8ms
Page Programming Time (Tpp)
2.4ms
Standby Supply Current
15uA
Interface
SPI

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
2,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.339 g

Overview

The PY25Q128HA is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device also contains an additional 3*1024 -byte security registers with OTP lock (One-Time Programmable), can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. Specifically designed for use in many different systems, the device supports read, program, and erase operations with a wide supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.

Key features

  • Supply Range from 2.7 to 3.6V for Read, Erase and Program
  • Ultra-Low Power consumption for Read, Erase and Program
  • X1, X2 and X4 Multi I/O, QPI, DTR Support
  • High reliability with 100K cycling and 20 Year-retention
  • Single 2.7 to 3.6V supply
  • Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3 Single, Dual, Quad SPI, QPI, DTR
  • Flexible Architecture for Code and Data Storage
  • Uniform 256-byte Page Program
  • Uniform 4K-byte Sector Erase
  • Uniform 32K/64K Erase
  • Full Chip Erase
  • Hardware Controlled Locking of Protected Sectors by WP# Pin
  • One Time Programmable (OTP) Security Register
  • 3*1024 -Byte Security Registers with OTP Lock
  • 128-bit Unique ID for each device
  • Fast Program and Erase Speed
  • JEDEC Standard Manufacturer and Device ID Read Methodology
  • Ultra-Low Power Consumption
  • High Reliability
  • Industry Standard Green Package Options

Alternatives

Similar parts — check the datasheet before substituting.

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