Varnitronics
PY25Q32HB-SUH-IR PUYA
PUYA

PY25Q32HB-SUH-IR

32Mbit 2.3V~3.6V 133MHz SPI SOP-8-208mil Memory

SOP-8-208milRoHSActive

Ultra-Low Power, 32M-bit Serial Multi I/O Flash Memory

Manufacturer
PUYA
Manufacturer part #
PY25Q32HB-SUH-IR
Store part #
C22439000
Package / case
SOP-8-208mil
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

23,911 in stock

#C22439000

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹83.20₹83.20
10+₹68.07₹680.70
30+₹60.51₹1,815.30
100+₹52.95₹5,295.00
500+₹48.41₹24,205.00
1,000+₹45.38₹45,380.00

1 × ₹83.20

₹83.20

excl. GST

₹98.18 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 2,000 per reel

PY25Q32HB-SUH-IR

₹83.20 for 1 + GST

Specifications

Operating Temperature
-40℃~+85℃
Features
Write enable latch;Power-on reset;Hardware write protection;Software write protection
Memory Size
32Mbit
Voltage - Supply
2.3V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
133MHz
Data Retention - TDR (Year)
20 Years
Block Erase Time(tBE)
120ms
Page Programming Time (Tpp)
400us
Standby Supply Current
18uA
Interface
SPI

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
2,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.176 g

Overview

The PY25Q32HB is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its sector erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device also contains an additional 3*1K -byte security registers with OTP lock (One-Time Programmable), can be used for purposes such as unique device serialization, system-level E

Key features

  • Supply Range from 2.3 to 3.6V for Read, Erase and Program
  • Ultra-Low Power consumption for Read, Erase and Program
  • X1, X2 and X4 Multi I/O, QPI
  • High reliability with 100K cycling and 20 Year-retention
  • Single 2.3 to 3.6V supply
  • Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
  • Single, Dual, Quad SPI, QPI
  • Flexible Architecture for Code and Data Storage
  • Uniform 256-byte Page Program
  • Uniform 4K-byte Sector Erase
  • Uniform 32K/64K-byte Block Erase
  • Full Chip Erase
  • Hardware Controlled Locking of Protected Sectors by WP
  • One Time Programmable (OTP) Security Register
  • 3*1K Byte Security Registers with OTP Lock
  • 128-bit Unique ID for each device
  • Fast Program and Erase Speed
  • JEDEC Standard Manufacturer and Device ID Read Methodology
  • Ultra-Low Power Consumption
  • High Reliability
  • Industry Standard Green Package Options
  • KGD for SiP

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