MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
26,12,850 in stock
STDatasheet (PDF)
SCTW90N65G2V
650V 119A 565W 24mΩ 1 N-channel N-Channel HiP-247 Single FETs, MOSFETs RoHS
HiP-247ROHS3 CompliantActive
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an HiP247 package
- Manufacturer
- ST
- Manufacturer part #
- SCTW90N65G2V
- Store part #
- C5268814
- Package / case
- HiP-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1 in stock
#C5268814
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹5,914.82 | ₹5,914.82 |
| 30+ | ₹5,640.90 | ₹1,69,227.00 |
1 × ₹5,914.82
₹5,914.82
excl. GST
₹6,979.49 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
SCTW90N65G2V
₹5,914.82 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+200℃
- Output Capacitance(Coss)
- 294pF
- Current - Continuous Drain(Id)
- 119A
- Ciss-Input Capacitance
- 3.38nF
- Pd - Power Dissipation
- 565W
- Reverse Transfer Capacitance (Crss)
- 49pF
- RDS(on)
- 24mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 157nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 5.333 g
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