MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
SINO-ICDatasheet (PDF)
SE1991G
223W 100V 120A 3.8mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
N-Channel Enhancement-Mode MOSFET
- Manufacturer
- SINO-IC
- Manufacturer part #
- SE1991G
- Store part #
- C7419529
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
26 in stock
#C7419529
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹96.51 | ₹96.51 |
| 10+ | ₹78.16 | ₹781.60 |
| 30+ | ₹69.09 | ₹2,072.70 |
| 100+ | ₹60.24 | ₹6,024.00 |
| 500+ | ₹54.84 | ₹27,420.00 |
| 800+ | ₹52.03 | ₹41,624.00 |
1 × ₹96.51
₹96.51
excl. GST
₹113.88 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per reel
SE1991G
₹96.51 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.36nF
- Ciss-Input Capacitance
- 7.3nF
- Pd - Power Dissipation
- 223W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 50pF
- RDS(on)
- 3.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 115nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.9V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.912 g
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