MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
SCILICONDatasheet (PDF)
SFW097N200C3
375W 200V 135A 8.4mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs
TO-247RoHSActive
MOSFET N-CH 200V 135A TO-247
- Manufacturer
- SCILICON
- Manufacturer part #
- SFW097N200C3
- Store part #
- C49257175
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
618 in stock
#C49257175
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹394.64 | ₹394.64 |
| 10+ | ₹376.41 | ₹3,764.10 |
| 30+ | ₹365.56 | ₹10,966.80 |
| 90+ | ₹354.71 | ₹31,923.90 |
| 510+ | ₹349.72 | ₹1,78,357.20 |
| 990+ | ₹347.34 | ₹3,43,866.60 |
1 × ₹394.64
₹394.64
excl. GST
₹465.68 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
SFW097N200C3
₹394.64 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 425pF
- Ciss-Input Capacitance
- 10.338nF
- Pd - Power Dissipation
- 375W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 135A
- Reverse Transfer Capacitance (Crss)
- 110pF
- RDS(on)
- 8.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 195nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.9V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.343 g
Same category
