MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SI4590DY-T1-GE3-VB
N-Channel+P-Channel Array 100V 6.3A 3.4W Surface Mount SO-8
SO-8RoHSActive
MOSFET N-CH+P-CH ARR 100V 6.3A SO-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SI4590DY-T1-GE3-VB
- Store part #
- C45662570
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C45662570
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹125.92 | ₹125.92 |
| 10+ | ₹107.90 | ₹1,079.00 |
| 30+ | ₹99.00 | ₹2,970.00 |
| 100+ | ₹90.10 | ₹9,010.00 |
| 500+ | ₹84.88 | ₹42,440.00 |
| 1,000+ | ₹82.07 | ₹82,070.00 |
1 × ₹125.92
₹125.92
excl. GST
₹148.59 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
SI4590DY-T1-GE3-VB
₹125.92 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 115pF
- Current - Continuous Drain(Id)
- 6.3A
- Ciss-Input Capacitance
- 865pF
- Pd - Power Dissipation
- 3.4W
- Reverse Transfer Capacitance (Crss)
- 60pF
- RDS(on)
- 66mΩ@4.5V
- Number
- 1 N-Channel + 1 P-Channel
- Gate Charge(Qg)
- 10nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel + P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.1 g
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