MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SI7850DP-T1-GE3-HXY
N-Channel 60V 30A 34.7W Surface Mount DFN5x6-8L
DFN5x6-8LRoHSActive
MOSFET N-CH 60V 30A DFN5x6-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SI7850DP-T1-GE3-HXY
- Store part #
- C22366851
- Package / case
- DFN5x6-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
57 in stock
#C22366851
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹125.59 | ₹125.59 |
| 10+ | ₹101.04 | ₹1,010.40 |
| 30+ | ₹88.88 | ₹2,666.40 |
| 100+ | ₹76.71 | ₹7,671.00 |
| 500+ | ₹69.54 | ₹34,770.00 |
| 1,000+ | ₹65.85 | ₹65,850.00 |
1 × ₹125.59
₹125.59
excl. GST
₹148.20 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SI7850DP-T1-GE3-HXY
₹125.59 for 1 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Output Capacitance(Coss)
- 86pF
- Current - Continuous Drain(Id)
- 30A
- Ciss-Input Capacitance
- 1.378nF
- Pd - Power Dissipation
- 34.7W
- Reverse Transfer Capacitance (Crss)
- 64pF
- RDS(on)
- 20mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 12.6nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.129 g
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