MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SIA906EDJ-T1-GE3-VB
N-Channel Array 30V 5.8A 2.7W Surface Mount DFN-6(2x2)
DFN-6(2x2)RoHSActive
MOSFET N-CH ARR 30V 5.8A DFN-6(2x2)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIA906EDJ-T1-GE3-VB
- Store part #
- C20755215
- Package / case
- DFN-6(2x2)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14 in stock
#C20755215
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹107.14 | ₹107.14 |
| 10+ | ₹87.17 | ₹871.70 |
| 30+ | ₹77.09 | ₹2,312.70 |
| 100+ | ₹67.22 | ₹6,722.00 |
| 500+ | ₹61.14 | ₹30,570.00 |
| 1,000+ | ₹58.19 | ₹58,190.00 |
1 × ₹107.14
₹107.14
excl. GST
₹126.43 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIA906EDJ-T1-GE3-VB
₹107.14 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 117pF
- Current - Continuous Drain(Id)
- 5.8A
- Ciss-Input Capacitance
- 886pF
- Pd - Power Dissipation
- 2.7W
- Reverse Transfer Capacitance (Crss)
- 55pF
- RDS(on)
- 22mΩ@10V;26mΩ@4.5V
- Number
- 2 N-Channel
- Gate Charge(Qg)
- 15nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.15 g
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