MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SiHB12N60E-GE3-VB
N-Channel 650V 18A 228W Surface Mount TO-263(D2PAK)
TO-263(D2PAK)ROHS CompliantActive
MOSFET N-CH 650V 18A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SiHB12N60E-GE3-VB
- Store part #
- C7568769
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C7568769
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹193.46 | ₹193.46 |
| 10+ | ₹161.33 | ₹1,613.30 |
| 50+ | ₹143.68 | ₹7,184.00 |
| 100+ | ₹123.73 | ₹12,373.00 |
| 500+ | ₹114.90 | ₹57,450.00 |
| 1,000+ | ₹110.92 | ₹1,10,920.00 |
1 × ₹193.46
₹193.46
excl. GST
₹228.28 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SiHB12N60E-GE3-VB
₹193.46 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 18A
- Output Capacitance(Coss)
- 105pF
- Ciss-Input Capacitance
- 2.322nF
- Pd - Power Dissipation
- 228W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 360mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.6 g
Overview
Applications
- Telecom
- Server and telecom power supplies
- Lighting — High-intensity discharge (HID)
- Fluorescent lamp ballast lighting
- Consumer electronics and computers
- ATX power supplies
- Industrial applications
- Welding
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
- Switch-mode power supplies (SMPS)
Key features
- Reduced reverse recovery time t<sub>rr</sub>, reverse recovery charge Q<sub>rr</sub>, and peak reverse recovery current I<sub>RRM</sub>
- Low figure of merit (FOM) R<sub>on</sub> x Q<sub>g</sub>
- Low input capacitance (C<sub>iss</sub>)
- Low switching losses due to reduced Q<sub>rr</sub>
- Ultra-low gate charge (Q<sub>g</sub>)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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