MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VISHAYDatasheet (PDF)
SIHB5N80AE-GE3
800V 4.4A 62.5W 1.17Ω@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS
D2PAK(TO-263)ROHS3 CompliantActive
N-Channel MOSFET, Current:2.8A, Voltage:800V
- Manufacturer
- VISHAY
- Manufacturer part #
- SIHB5N80AE-GE3
- Store part #
- C3277558
- Package / case
- D2PAK(TO-263)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
200 in stock
#C3277558
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹219.59 | ₹219.59 |
| 10+ | ₹186.79 | ₹1,867.90 |
| 30+ | ₹166.16 | ₹4,984.80 |
| 100+ | ₹145.09 | ₹14,509.00 |
| 500+ | ₹135.53 | ₹67,765.00 |
| 1,000+ | ₹131.40 | ₹1,31,400.00 |
1 × ₹219.59
₹219.59
excl. GST
₹259.12 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SIHB5N80AE-GE3
₹219.59 for 1 + GST
Specifications
- Drain to Source Voltage
- 800V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 20pF
- Current - Continuous Drain(Id)
- 4.4A
- Ciss-Input Capacitance
- 321pF
- Pd - Power Dissipation
- 62.5W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 1.17Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 16.5nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.488 g
Overview
This series of low-charge power MOSFETs features significantly lower gate charge compared to conventional power MOSFETs. Utilizing the new LCDMOS (Low Charge DMOS) technology, device performance is enhanced without increasing product cost, reducing gate drive requirements and lowering overall system cost. In addition, lower switching losses and higher efficiency can be achieved across a wide range of high-frequency applications. Using the new low-charge power MOSFETs, frequencies of several MHz can be achieved at high currents. The improvements in these devices, combined with the proven ruggedness and reliability of power MOSFETs, provide designers with a new power transistor standard for switching applications.
Applications
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) supplies
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent lamp ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
Key features
- Low figure of merit (FOM) Ron × Qg
- Low effective capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
- Integrated Zener diode ESD protection
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | VBL18R07S#C42412816VBsemi Elec · TO-263(D2PAK) | VBsemi Elec | TO-263(D2PAK) | 5 | ₹422.12 · 5 in stock | View |
 | SIHB6N80AE-GE3#C20346113VISHAY · D2PAK(TO-263) | VISHAY | D2PAK(TO-263) | 20 | ₹409.89 · 20 in stock | View |
 | MS6N100FE#C7424088MASPOWER · TO-263 | MASPOWER | TO-263 | 36 | ₹110.54 · 36 in stock | View |
 | STB6N80K5#C2969906ST · D2PAK | ST | D2PAK | 10 | ₹237.36 · 10 in stock | View |
 | RS9N90S#C51904723REASUNOS · TO-263 | REASUNOS | TO-263 | 133 | ₹90.49 · 133 in stock | View |
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