MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SIHP12N60E-GE3-VB
N-Channel 650V 12A 210W Through Hole TO-220
TO-220RoHSActive
MOSFET N-CH 650V 12A TO-220
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIHP12N60E-GE3-VB
- Store part #
- C46527798
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C46527798
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹305.48 | ₹305.48 |
| 10+ | ₹267.17 | ₹2,671.70 |
| 50+ | ₹246.06 | ₹12,303.00 |
| 100+ | ₹185.14 | ₹18,514.00 |
| 500+ | ₹174.38 | ₹87,190.00 |
| 1,000+ | ₹169.65 | ₹1,69,650.00 |
1 × ₹305.48
₹305.48
excl. GST
₹360.47 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
SIHP12N60E-GE3-VB
₹305.48 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 12A
- Output Capacitance(Coss)
- 80pF
- Ciss-Input Capacitance
- 2.1nF
- Pd - Power Dissipation
- 210W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 360mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.28 g
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