MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹1.93
26,12,850 in stock
VBsemi ElecDatasheet (PDF)
SiHU6N80E-VB
N-Channel 800V 6A 210W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 800V 6A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SiHU6N80E-VB
- Store part #
- C22357335
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22357335
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹161.73 | ₹161.73 |
| 10+ | ₹133.78 | ₹1,337.80 |
| 30+ | ₹118.42 | ₹3,552.60 |
| 80+ | ₹100.95 | ₹8,076.00 |
| 480+ | ₹93.27 | ₹44,769.60 |
| 960+ | ₹89.77 | ₹86,179.20 |
1 × ₹161.73
₹161.73
excl. GST
₹190.84 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 80 per tube
SiHU6N80E-VB
₹161.73 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Output Capacitance(Coss)
- 81pF
- Current - Continuous Drain(Id)
- 6A
- Ciss-Input Capacitance
- 2.6nF
- Pd - Power Dissipation
- 210W
- Reverse Transfer Capacitance (Crss)
- 9pF
- RDS(on)
- 850mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 122nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.4 g
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