MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIHU7N60E-GE3-VB
N-Channel 650V 7A 83W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 650V 7A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIHU7N60E-GE3-VB
- Store part #
- C41370437
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C41370437
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹200.86 | ₹200.86 |
| 10+ | ₹175.67 | ₹1,756.70 |
| 30+ | ₹161.90 | ₹4,857.00 |
| 80+ | ₹121.64 | ₹9,731.20 |
| 480+ | ₹114.74 | ₹55,075.20 |
| 960+ | ₹111.52 | ₹1,07,059.20 |
1 × ₹200.86
₹200.86
excl. GST
₹237.01 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
SIHU7N60E-GE3-VB
₹200.86 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 25pF
- Current - Continuous Drain(Id)
- 7A
- Ciss-Input Capacitance
- 360pF
- Pd - Power Dissipation
- 83W
- Reverse Transfer Capacitance (Crss)
- 12pF
- RDS(on)
- 700mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
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