MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIR186LDP-T1-RE3-HXY
73.5W 60V 100A 3.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR186LDP-T1-RE3-HXY
- Store part #
- C51949316
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
345 in stock
#C51949316
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹109.28 | ₹109.28 |
| 10+ | ₹88.68 | ₹886.80 |
| 30+ | ₹78.28 | ₹2,348.40 |
| 100+ | ₹68.08 | ₹6,808.00 |
| 500+ | ₹62.01 | ₹31,005.00 |
| 1,000+ | ₹58.98 | ₹58,980.00 |
1 × ₹109.28
₹109.28
excl. GST
₹128.95 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR186LDP-T1-RE3-HXY
₹109.28 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 773pF
- Ciss-Input Capacitance
- 1.673nF
- Pd - Power Dissipation
- 73.5W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 100A
- Reverse Transfer Capacitance (Crss)
- 46.8pF
- RDS(on)
- 3.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 28.5nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.9V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.147 g
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