MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIR4604LDP-T1-GE3-HXY
60V 65A 89W 8mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
MOSFET N-CH 60V 65A DFN-8L(5x6)
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR4604LDP-T1-GE3-HXY
- Store part #
- C49420500
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C49420500
Stock & price checked 45 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹153.42 | ₹153.42 |
| 10+ | ₹128.34 | ₹1,283.40 |
| 30+ | ₹115.60 | ₹3,468.00 |
| 100+ | ₹103.29 | ₹10,329.00 |
| 500+ | ₹86.87 | ₹43,435.00 |
| 1,000+ | ₹83.19 | ₹83,190.00 |
1 × ₹153.42
₹153.42
excl. GST
₹181.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR4604LDP-T1-GE3-HXY
₹153.42 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 370pF
- Current - Continuous Drain(Id)
- 65A
- Ciss-Input Capacitance
- 930pF
- Pd - Power Dissipation
- 89W
- Reverse Transfer Capacitance (Crss)
- 20pF
- RDS(on)
- 8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 19nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.145 g
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