MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
JSMSEMIDatasheet (PDF)
SIR662DP-T1-GE3-JSM
N-Channel 60V 130A 140W Surface Mount DFN5060-8L
DFN5060-8LROHS CompliantActive
MOSFET N-CH 60V 130A DFN5060-8L
- Manufacturer
- JSMSEMI
- Manufacturer part #
- SIR662DP-T1-GE3-JSM
- Store part #
- C7462820
- Package / case
- DFN5060-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
4,724 in stock
#C7462820
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹133.64 | ₹133.64 |
| 10+ | ₹120.68 | ₹1,206.80 |
| 30+ | ₹113.57 | ₹3,407.10 |
| 100+ | ₹105.58 | ₹10,558.00 |
| 500+ | ₹101.04 | ₹50,520.00 |
| 1,000+ | ₹99.32 | ₹99,320.00 |
1 × ₹133.64
₹133.64
excl. GST
₹157.70 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR662DP-T1-GE3-JSM
₹133.64 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 130A
- Ciss-Input Capacitance
- 5.377nF
- Pd - Power Dissipation
- 140W
- Reverse Transfer Capacitance (Crss)
- 77.7pF
- RDS(on)
- 3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 66.1nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.142 g
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