MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
MSKSEMIDatasheet (PDF)
SIRA12DP-T1-GE3-MS
187W 30V 120A 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- MSKSEMI
- Manufacturer part #
- SIRA12DP-T1-GE3-MS
- Store part #
- C51927976
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
480 in stock
#C51927976
Stock & price checked 20 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹49.74 | ₹248.70 |
| 50+ | ₹39.50 | ₹1,975.00 |
| 150+ | ₹35.01 | ₹5,251.50 |
| 500+ | ₹29.48 | ₹14,740.00 |
| 2,500+ | ₹27.03 | ₹67,575.00 |
| 5,000+ | ₹25.59 | ₹1,27,950.00 |
5 × ₹49.74
₹248.70
excl. GST
₹293.47 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIRA12DP-T1-GE3-MS
₹248.70 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 340pF
- Ciss-Input Capacitance
- 4.345nF
- Pd - Power Dissipation
- 187W
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 225pF
- RDS(on)
- 3.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 56.9nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.231 g
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