MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SIS410DN-T1-GE3-HXY
N-Channel 20V 60A 15W Surface Mount DFN3x3-8L
DFN3x3-8LRoHSSold out at source
MOSFET N-CH 20V 60A DFN3x3-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS410DN-T1-GE3-HXY
- Store part #
- C22366927
- Package / case
- DFN3x3-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22366927
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹56.16 | ₹56.16 |
| 10+ | ₹44.02 | ₹440.20 |
| 30+ | ₹38.82 | ₹1,164.60 |
| 100+ | ₹32.53 | ₹3,253.00 |
| 500+ | ₹29.71 | ₹14,855.00 |
| 1,000+ | ₹27.98 | ₹27,980.00 |
1 × ₹56.16
₹56.16
excl. GST
₹66.27 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS410DN-T1-GE3-HXY
₹56.16 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 20V
- Output Capacitance(Coss)
- 407pF
- Current - Continuous Drain(Id)
- 60A
- Ciss-Input Capacitance
- 2.5nF
- Pd - Power Dissipation
- 15W
- Reverse Transfer Capacitance (Crss)
- 386pF
- RDS(on)
- 4mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 32nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 700mV
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.064 g
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