MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SIS413DN-T1-GE3-HXY
P-Channel 30V 55A 21.5W Surface Mount DFN-8L(3x3)
DFN-8L(3x3)RoHSActive
MOSFET P-CH 30V 55A DFN-8L(3x3)
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS413DN-T1-GE3-HXY
- Store part #
- C22366586
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
235 in stock
#C22366586
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹36.17 | ₹180.85 |
| 50+ | ₹28.97 | ₹1,448.50 |
| 150+ | ₹25.88 | ₹3,882.00 |
| 500+ | ₹22.03 | ₹11,015.00 |
| 2,500+ | ₹20.32 | ₹50,800.00 |
| 5,000+ | ₹19.29 | ₹96,450.00 |
5 × ₹36.17
₹180.85
excl. GST
₹213.40 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS413DN-T1-GE3-HXY
₹180.85 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 346pF
- Ciss-Input Capacitance
- 2.8nF
- Pd - Power Dissipation
- 21.5W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 55A
- Reverse Transfer Capacitance (Crss)
- 319pF
- RDS(on)
- 8.5mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 30nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.056 g
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