MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SIS414DN-T1-GE3-HXY
N-Channel 30V 20A 5.5W Surface Mount DFN-8L(3x3)
DFN-8L(3x3)RoHSActive
MOSFET N-CH 30V 20A DFN-8L(3x3)
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS414DN-T1-GE3-HXY
- Store part #
- C22366918
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
110 in stock
#C22366918
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹37.40 | ₹187.00 |
| 50+ | ₹29.74 | ₹1,487.00 |
| 150+ | ₹26.46 | ₹3,969.00 |
| 500+ | ₹22.37 | ₹11,185.00 |
| 2,500+ | ₹20.55 | ₹51,375.00 |
| 5,000+ | ₹19.45 | ₹97,250.00 |
5 × ₹37.40
₹187.00
excl. GST
₹220.66 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS414DN-T1-GE3-HXY
₹187.00 for 5 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 79pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 490pF
- Pd - Power Dissipation
- 5.5W
- Reverse Transfer Capacitance (Crss)
- 61pF
- RDS(on)
- 15mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 10nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.075 g
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