MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
MSKSEMIDatasheet (PDF)
SISA96DN-T1-GE3-MS
37.5W 30V 35A 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- MSKSEMI
- Manufacturer part #
- SISA96DN-T1-GE3-MS
- Store part #
- C51908787
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
720 in stock
#C51908787
Stock & price checked 25 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹27.56 | ₹137.80 |
| 50+ | ₹22.68 | ₹1,134.00 |
| 150+ | ₹20.59 | ₹3,088.50 |
| 500+ | ₹17.98 | ₹8,990.00 |
| 2,500+ | ₹13.42 | ₹33,550.00 |
| 5,000+ | ₹12.73 | ₹63,650.00 |
5 × ₹27.56
₹137.80
excl. GST
₹162.60 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISA96DN-T1-GE3-MS
₹137.80 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 131pF
- Ciss-Input Capacitance
- 940pF
- Pd - Power Dissipation
- 37.5W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 35A
- Reverse Transfer Capacitance (Crss)
- 109pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 9.8nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.1 g
Same category
