Varnitronics
SISS67DN-T1-GE3 VISHAY
VISHAY

SISS67DN-T1-GE3

30V 60A 65.8W 5.5mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS

-ROHS3 CompliantActive
Manufacturer
VISHAY
Manufacturer part #
SISS67DN-T1-GE3
Store part #
C6488358
Package / case
-
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

104 in stock

#C6488358

Stock & price checked 13 days ago

QuantityUnit pricePack price
1+₹324.84₹324.84
10+₹277.59₹2,775.90
30+₹248.21₹7,446.30
100+₹217.94₹21,794.00
500+₹204.22₹1,02,110.00
1,000+₹198.34₹1,98,340.00

1 × ₹324.84

₹324.84

excl. GST

₹383.31 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

SISS67DN-T1-GE3

₹324.84 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
60A
Ciss-Input Capacitance
4.38nF
Pd - Power Dissipation
65.8W
Reverse Transfer Capacitance (Crss)
460pF
RDS(on)
5.5mΩ@10V
Number
1 P-Channel
Gate Charge(Qg)
111nC@10V
Gate Threshold Voltage (Vgs(th))
2.5V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.65 g

Overview

Applications

  • Adapter and charger switches
  • Load switches
  • Battery management

Key features

  • TrenchFET 3rd generation P-channel power MOSFET
  • 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
  • Ultra-low RDS(on) minimizes conduction loss
  • RoHS compliant
  • Halogen-free

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